PROCESS TESTING SEMICONDUCTOR PHOTODETECTORS

摘要

FIELD: testing of semiconductors. SUBSTANCE: process can be used for accelerated tests of semiconductor photodetectors to predict their reliability in process of long-duration operation. Process is based on irradiation of photodetectors before exposure to temperature with gamma-neutron pulse with integrated flux lying within limits <EMI ID=0.514 HE=6 WI=36 TI=CHI> N/sq.cm with average energy of neutrons equal to 1.5 MeV. EFFECT: considerable shortening of duration of tests and reduced cost of them, increased authenticity of test results.