发明名称 Protection of output stage transistor of an RF power amplifier
摘要 A protection method may prevent a load-mismatch-induced failure in solid-state power amplifiers. In an RF power amplifier, the load voltage standing-wave ratio results in very high voltage peaks at the collector of the final stage and may eventually lead to permanent failure of the power transistor due to avalanche breakdown. The method avoids breakdown by attenuating the input power to the final stage during overvoltage conditions, thus limiting the output collector swing. This is accomplished by a feedback control system, which detects the peak voltage at the output collector node and clamps its value to a given threshold by varying the circuit gain. Indeed, the control loop is unlocked in the nominal condition and it acts when an output mismatching condition is detected. A control circuit also allows a supply-independent collector-clamping threshold to be accurately set.
申请公布号 US7358807(B2) 申请公布日期 2008.04.15
申请号 US20060361238 申请日期 2006.02.24
申请人 STMICROELECTRONICS S.R.L. 发明人 SCUDERI ANGELO;SCUDERI ANTONINO;LA PAGLIA LUCA;CARRARA FRANCESCO;PALMISANO GIUSEPPE
分类号 H03G3/20 主分类号 H03G3/20
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