发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode on the first portion of the lower conductive film; removing the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.
申请公布号 US2008093600(A1) 申请公布日期 2008.04.24
申请号 US20070958230 申请日期 2007.12.17
申请人 PARK MIN-WOOK;BAEK BUM-KI;LEE JEONG-YOUNG;CHOI KWON-YOUNG;KWAK SANG-KI;JEON SANG-JIN 发明人 PARK MIN-WOOK;BAEK BUM-KI;LEE JEONG-YOUNG;CHOI KWON-YOUNG;KWAK SANG-KI;JEON SANG-JIN
分类号 G02F1/1339;H01L29/04;G02F1/136;G02F1/1368;G09F9/00;G09F9/30;H01L21/00;H01L21/3205;H01L21/3213;H01L21/336;H01L21/77;H01L21/84;H01L23/52;H01L29/417;H01L29/786;H01L31/036 主分类号 G02F1/1339
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