Verfahren zum epitaktischen Wachsen eines Halbleiterkristalls,申请号DE1992628467T-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Verfahren zum epitaktischen Wachsen eines Halbleiterkristalls
摘要
申请公布号	DE69228467(T2)	申请公布日期	1999.09.16
申请号	DE1992628467T	申请日期	1992.11.25
申请人	RESEARCH DEVELOPMENT CORP. OF JAPAN, TOKIO/TOKYO;NISHIZAWA, JUNICHI;ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI, SENDAI	发明人	NISHIZAWA, JUN-ICHI;KURABAYASHI, TORU
分类号	C30B25/02;C30B23/02;C30B25/10;C30B25/12;C30B25/16;H01L21/205	主分类号	C30B25/02
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Systems and conveyance structures for high power long distance laser transmission

Heat exchanger plate and plate heat exchanger with port hole having corrugation

Bat fabrication system and method

Economical heavy concrete weight coating for submarine pipelines

Dispenser for multi-texture floss

Pre-combustion device for an internal combustion engine

Cast piston having supporting ribs, and method for the production of such a piston

Symmetric extended porting

Assembled shaft element, particularly assembled camshaft for valve-controlled internal combustion engines

Traction mechanism drive with a compensating device for vibration reduction

Operating an engine with reformate

Positioning system for at least one flexible tubular element connected to a cup-shaped member

Retractable post assembly with alarm function

Sewing machine auxiliary storage compartment

Vacuum-assisted brake-force booster for a motor-vehicle braking system

Cutting machine

Angle drive assembly

Device for generating stiffness and method for controlling stiffness and joint of robot manipulator comprising the same