发明名称 |
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same |
摘要 |
In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
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申请公布号 |
US7482616(B2) |
申请公布日期 |
2009.01.27 |
申请号 |
US20050139283 |
申请日期 |
2005.05.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG YOON-JONG;HWANG YOUNG-NAM;NAM SANG-DON;CHO SUNG-LAE;KOH GWAN-HYEOB;LEE CHOONG-MAN;KUH BONG-JIN;HA YONG-HO;LEE SU-YOUN;JEONG CHANG-WOOK;YI JI-HYE;RYOO KYUNG-CHANG;LEE SE-HO;AHN SU-JIN;PARK SOON-OH;LEE JANG-EUN |
分类号 |
H01L29/02;H01L21/00;H01L21/336;H01L27/24;H01L29/00;H01L29/78 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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