Method of forming a DRAM stacked capacitor using an etch blocking film of silicon oxide

摘要

A method of forming a stacked capacitor of a dynamic random access memory is disclose. The stacked capacitor is provided on a transistor and comprises first and second electrodes and a dielectric film sandwiched therebetween. The first electrode serving as a storage node. A first silicon oxide film is deposited on an interlayer dielectric film provided on the transistor. The first silicon oxide film is provided for preventing etching of the interlayer dielectric film. Subsequently, an amorphous silicon film is deposited on the first silicon oxide film. The silicon film is used to form the storage node and has density lower than density of the first silicon oxide film. Following this, a second silicon oxide is deposited on the silicon film. The second silicon oxide film is used to shape said silicon film. The second silicon oxide film is selectively removed after the silicon film is shaped using the second silicon oxide.