发明名称 |
Semiconductor device with perovskite capacitor and its manufacture method |
摘要 |
A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate,; forming a first insulating film over the semiconductor substrate, the first insulating film covering the insulated gate electrode; forming a contact window through the first insulating film to at least one of the source/drain regions; embedding a metal plug in the contact window; forming a second insulating film having an oxygen blocking function on the first insulating film, the second insulating film covering the metal plug; forming a capacitor lower electrode on the second insulating film; forming a dielectric oxide film having a perovskite crystal structure on the lower electrode; annealing the semiconductor substrate in an oxygen-containing atmosphere; and forming a capacitor upper electrode on the dielectric oxide film. A semiconductor device can be realized which has capacitors with dielectric oxide films of a perovskite crystal structure having a high dielectric constant.
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申请公布号 |
US5953619(A) |
申请公布日期 |
1999.09.14 |
申请号 |
US19980040284 |
申请日期 |
1998.03.18 |
申请人 |
FUJITSU LIMITED |
发明人 |
MIYAZAWA, HISASHI;INOUE, KENICHI;YAMAZAKI, TATSUYA |
分类号 |
H01L21/8247;H01L21/02;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;H01L29/788;H01L29/792;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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