发明名称 Process for laser detection of gas and contaminants in a wafer transport gas tunnel
摘要 PCT No. PCT/JP96/03852 Sec. 371 Date Jul. 29, 1997 Sec. 102(e) Date Jul. 29, 1997 PCT Filed Dec. 27, 1996 PCT Pub. No. WO97/24760 PCT Pub. Date Jul. 10, 1997A process of using a transport system for transporting substrate wafer, for making semiconductor integrated circuits and liquid crystal display panels and the like advanced devices, is presented. The object is to prevent surface degradation which may be inflicted on the surface to interfere with proper processing of the substrate. The substrate wafers are delivered to process chambers always in clean surface conditions. A method illustrated utilizes a purge gas containing an inert gas or a mixture of an inert gas and oxygen for flowing inside the tunnel space, and a semiconductor laser detection system to detect the contamination levels within the tunnel space, and the transport parameters are controlled according to the measured data.
申请公布号 US5953591(A) 申请公布日期 1999.09.14
申请号 US19970894497 申请日期 1997.07.29
申请人 NIPPON SANSO CORPORATION 发明人 ISHIHARA, YOSHIO;TODA, MASAYUKI;OHMI, TADAHIRO
分类号 B65G49/07;G03F7/20;H01L21/00;H01L21/677;(IPC1-7):H01L21/30 主分类号 B65G49/07
代理机构 代理人
主权项
地址