Method and device for producing monocrystals

摘要

A method for producing a silicon monocrystal has a growing monocrystal kept for a specified dwell time in the specified temperature range of from 850 DEG C. to 1100 DEG C. This dwell time for the growing monocrystal in the chosen temperature range is either greater than 250 min or less than 80 min. A device and a method, in which the cooling rate of the growing monocrystal is to be influenced, has a heat shield which is subdivided into adjacent annular zones between a lower rim and an upper rim. These adjacent zones differ in regard to each's thermal conduction and transparency to heat radiation.