| 摘要 |
PCT No. PCT/DE96/01073 Sec. 371 Date Jan. 9, 1998 Sec. 102(e) Date Jan. 9, 1998 PCT Filed Jun. 18, 1996 PCT Pub. No. WO97/04486 PCT Pub. Date Feb. 6, 1997A semiconductor, where a region is introduced into a semiconductor substrate and, together with this substrate, forms a p-n junction. Provision is made in the vicinity of the space charge region being formed for a covering electrode and a heavily doped region. The covering electrode is coupled to a voltage divider, through which the potential of the covering electrode is adjusted with temperature compensation.
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