Method for forming trench type isolation layer in semiconductor device,申请号KR20020086192-传众专利搜索

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发明名称	Method for forming trench type isolation layer in semiconductor device
摘要
申请公布号	KR100905997(B1)	申请公布日期	2009.07.06
申请号	KR20020086192	申请日期	2002.12.30
申请人		发明人
分类号	H01L21/76;(IPC1-7):H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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