发明名称 |
Method of thin film forming on semiconductor substrate |
摘要 |
Ultra fine powder of metal dispersed in organic solvent is applied onto a surface of a semiconductor substrate, and heated to evaporate solvent and to sinter the ultra fine powder of metal. Deep contact holes or via holes, and grooves or trenches in the substrate can be filled up with metal, and the surface of the substrate can be covered with thin metal film.
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申请公布号 |
US5953629(A) |
申请公布日期 |
1999.09.14 |
申请号 |
US19960706679 |
申请日期 |
1996.09.06 |
申请人 |
VACUUM METALLURGICAL CO., LTD. |
发明人 |
IMAZEKI, NOBUYA;ODA, MASAAKI;NAKAYAMA, IZUMI |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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