发明名称 Method of thin film forming on semiconductor substrate
摘要 Ultra fine powder of metal dispersed in organic solvent is applied onto a surface of a semiconductor substrate, and heated to evaporate solvent and to sinter the ultra fine powder of metal. Deep contact holes or via holes, and grooves or trenches in the substrate can be filled up with metal, and the surface of the substrate can be covered with thin metal film.
申请公布号 US5953629(A) 申请公布日期 1999.09.14
申请号 US19960706679 申请日期 1996.09.06
申请人 VACUUM METALLURGICAL CO., LTD. 发明人 IMAZEKI, NOBUYA;ODA, MASAAKI;NAKAYAMA, IZUMI
分类号 H01L21/768;(IPC1-7):H01L21/44 主分类号 H01L21/768
代理机构 代理人
主权项
地址