Fuse option circuit for memory device

摘要

A fuse option circuit for memory device capable of performing the function of the fuse option circuit completely even in the case that the fuse is incompletely connected, is disclosed. The fuse option circuit according to the present invention includes a transistor serially connected to the fuse for alternatively selecting the turn-on resistance of the transistor being greater than the resistive components of the fuse when the fuse is stably connected, and smaller when the fuse is unstably disconnected, such that the advantageous effects which improve the production yield of the semiconductor device can be obtained by clearly determining the fuse connection state of the fuse option circuit.