| 发明名称 |
Method for stripping ion implanted photoresist layer |
| 摘要 |
The invention concerns a method for stripping the photoresist layer and the crust from a semiconductor that has been treated with a high dose and high energy ion implantation step, wherein the method comprises an ion assisted plasma step using a mixture of water vapour, helium and CF4 in an RIE reactor. <IMAGE>
|
| 申请公布号 |
EP0940846(A1) |
申请公布日期 |
1999.09.08 |
| 申请号 |
EP19980870048 |
申请日期 |
1998.03.06 |
| 申请人 |
INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW;COBRAIN N.V. |
发明人 |
JEHOUL, CHRISTIANE;VAN BAEKEL, KRISTEL;BOULLART, WERNER;STRUYF, HERBERT;VAN HAELEMEERSCH, SERGE |
| 分类号 |
G03F7/42;H01L21/311;(IPC1-7):H01L21/311 |
主分类号 |
G03F7/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
