发明名称 |
MOS device having a source/drain region conforming to a conductive material filled French structure in a substrate |
摘要 |
A MOS device and method of fabricating the same, wherein the source/drain region has polysilicon trench structure which are formed by self-alignment using silicon oxide layers as masks. The source/drain regions extend to the field oxide layer and/or above the gate. Therefore, contacts can be formed on source/drain conductive regions above the field oxide layer.
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申请公布号 |
US5949116(A) |
申请公布日期 |
1999.09.07 |
申请号 |
US19970888630 |
申请日期 |
1997.07.07 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WEN, JEMMY |
分类号 |
E02D27/01;H01L21/336;H01L21/8234;H01L29/417;H01L29/78;(IPC1-7):H01L7/54 |
主分类号 |
E02D27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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