| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit(SIC) capable of reducing power consumption within a potential conversion circuit for converting the potential of bit lines. SOLUTION: (1) This SIC is equipped with bit lines BL1, BL2, precharge circuit PCC connected to these lines, potential conversion circuit SA and a memory cell MC. In the potential conversion circuit SA, between a high potential V2 and the ground potential GND, there are a current passage for transistors T3, T4, T6 and one for transistors T3, T5, T9. The gate electrode for the transistors T3, T4, T6 receives a mode signal PC, while that for transistors T4, T5 is connected to the bit lines BL1, BL2. (2) With this structure as above, the period is shortened in which a current flows from the high potential V2 to the ground GND inside the potential conversion circuit SA, thereby reducing the power consumption.</p> |
