GROWTH OF NITRIDE-BASED III-V COMPOUND SEMICONDUCTOR, MANUFACTURE OF SEMICONDUCTOR DEVICE, SUBSTRATE FOR GROWTH OF NITRIDE-BASED III-V COMPOUND SEMICONDUCTOR, MANUFACTURE OF THE SUBSTRATE FOR GROWTH OF NITRIDE-BASED III-V COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To grow a good quality single-crystalline, nitride-based III-V semiconductor. SOLUTION: A layer of laminated substance is grown on a substrate by a molecular beam epitaxy process or the like, and then a nitride III-V compound semiconductor is grown on the laminated substance layer. As the substrate GaAs substrate 1 or an Si substrate is sued. Dangling bonds on the substrate are terminated beforehand preferably prior to the growth of the laminated substance layer. As the laminated substance a transition metal dichalcogenide such as MoS2 , graphite, mica, or the like is used. The nitride-based III-V compound semiconductor is used in the manufacture of semiconductor lasers, light- emitting diodes, field effect transistors(FET), etc.