| 摘要 |
PROBLEM TO BE SOLVED: To enhance the luminance and luminous output of a nitride semiconductor light-emitting element, by a method wherein an active layer, which comprises a nitride semiconductor layer and has a quantum well structure, is formed on an N-type nitride semiconductor layer and a P-type nitride semiconductor layer is formed on the active layer. SOLUTION: An N-type first clad layer 5 is formed of a nitride semiconductor layer of a band gap energy larger than that of an active layer 6 and the nitride semiconductor layer is formed of an N-type Inx Ga1-x N (0<=x<1) layer. As the crystal of this layer 5 is soft in comparison with that of an Al containing nitride semiconductor layer, this layer 5 performs such an action that a buffer layer performs. A P-type first clad layer 7 is formed of a P-type nitride semiconductor layer of a band gap energy larger than that of a nitride semiconductor layer constituting the layer 6 and the P-type nitride semiconductor layer is formed of a P-type Aly Ga1-y N (0<=y<=1) layer. Even among the layers 5, 6 and 7 and other layers, which constitute a nitride semiconductor light-emitting element, the Al containing nitride semiconductor layer, such as a P-type AlGaN layer, is formed in contact with the active layer consisting of a quantum well structure, whereby the luminous output of the nitride semiconductor light-emitting element is raised. |
