发明名称 |
Electrochemically etching a p-type semiconductor layer |
摘要 |
A p-type semiconductor layer is electrochemically etched by applying an alternating high and low density etching current. The low density etching current causes the material to become porous and the high density etching current causes complete removal of the material. Etching is performed through a mask.
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申请公布号 |
NL1008441(C2) |
申请公布日期 |
1999.09.03 |
申请号 |
NL19981008441 |
申请日期 |
1998.03.02 |
申请人 |
STICHTING VOOR DE TECHNISCHE WETENSCHAPPEN |
发明人 |
RINT WILLEM TJERKSTRA |
分类号 |
B81C1/00;C25F3/14;H01L21/3063;(IPC1-7):H01L21/306 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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