| 摘要 |
<p>A satisfactory resist pattern can be formed, by focusing detection at a high accuracy, from a photoresist containing an infrared absorption dye and by an exposure method of determining focusing by an infrared light and using a photoresist containing the infrared absorption dye as the photoresist, whereby the focusing detection system is free from the effect of the secondary reflection or the like, that is, the focusing detection system is free from the effect of light transmitted or reflected in the substrate, whether the substrate is infrared light reflecting or permeating.</p> |
