| 摘要 |
PROBLEM TO BE SOLVED: To form a conductive film of which the interface is stable and not resistive in the double-layer film structure of polysilicon film/silicide film. SOLUTION: In a method for manufacturing a semiconductor device, when forming a conductive film, a nonuniform natural oxide film 7 on a silicon film 3 is removed first, and a thin film of an uniform clean silicon oxide film 4 is then formed through oxidizing chemical treatment, and after that a silicide film 5 is formed. This allows the stable conductive film 6 having a double- layered structure of polysilicon film 3/silicide film 5 to be formed. |
