发明名称 |
Compound semiconductor device |
摘要 |
The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an insulating mask so as to terminate the surface of the insulating mask in a state that the compound semiconductor layer is covered with the insulating mask, on the surface of the compound semiconductor layer exposed from the insulating mask. |
申请公布号 |
US5945690(A) |
申请公布日期 |
1999.08.31 |
申请号 |
US19980025645 |
申请日期 |
1998.02.18 |
申请人 |
FUJITSU LIMITED |
发明人 |
SAITO, JUNJI;KIKKAWA, TOSHIHIDE;OCHIMIZU, HIROSATO |
分类号 |
C30B25/02;H01L21/20;H01L21/203;H01L21/285;H01L21/335;(IPC1-7):H01L33/00 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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