A transient voltage suppressor

摘要

A breakover diode (1) has a vertical thyristor structure having an anode emitter layer (10), a base layer (11), a base layer (12), and a cathode emitter layer (13). The diode (1) also includes an auxiliary junction (J2<2>) formed by lateral first and second regions 20 and 21 having p- and n+ doping respectively. The n+ region 21 has a high doping concentration so that the auxiliary junction (J2<2>) breaksdown before other junctions in the vertical thyristor structure, thus allowing simple setting of diode parameters by fabricating in the lateral regions.