| 摘要 |
A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target (14) at 600 Oe or greater as well as by charging the target (14) with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The apparatus has a vacuum chamber (1) adapted to support therein a substrate (11) and a target (14) in an opposed relationship for forming by sputtering the transparent conductive film on the substrate (11) by plasma discharging generated therebetween. The apparatus has a device (16) for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target (14), a DC power supply (19) for charging the target (14) with a DC electric field, and an RF power supply (20) for charging the target (14) with an RF electric field superimposed on the DC electric field. <IMAGE> |
