| 发明名称 |
Compound semiconductor device having a group III-V compound semiconductor layer containing therein T1 and As |
| 摘要 |
A compound semiconductor device includes a substrate and a group III-V compound semiconductor layer provided on the substrate, wherein the group III-V compound semiconductor layer contains As as a group V element and Tl as a group III element.
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| 申请公布号 |
US5939733(A) |
申请公布日期 |
1999.08.17 |
| 申请号 |
US19970920054 |
申请日期 |
1997.08.29 |
| 申请人 |
RICOH COMPANY, LTD. |
发明人 |
SATO, SHUNICHI |
| 分类号 |
H01L31/0304;H01L33/06;H01L33/30;H01L33/40;H01S5/00;H01S5/183;H01S5/323;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
H01L31/0304 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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