发明名称 |
Semiconductor device with non-deposited barrier layer |
摘要 |
A semiconductor device comprises a semiconductor substrate of a first conductivity type, a first conductive layer formed in the semiconductor substrate using a dopant, and being of a second conductivity type, a silicon-rich nitride film formed on the first conductive layer, and a second conductive layer formed on the silicon-rich nitride film, wherein the silicon-rich nitride film inhibits outdiffusion of dopant from the first conductive layer into the second conductive layer, and blocks interdiffusion between the second conductive layer and the first conductive layer.
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申请公布号 |
US5940725(A) |
申请公布日期 |
1999.08.17 |
申请号 |
US19970911584 |
申请日期 |
1997.08.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HUNTER, THOMAS;MORTON, JOSEPH M.;SHORE, SUSAN EILEEN;YU, ANTHONY J. |
分类号 |
H01L21/283;H01L21/28;H01L21/285;H01L21/8238;H01L27/092;H01L29/43;H01L29/78;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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