| 摘要 |
PROBLEM TO BE SOLVED: To eliminate dispersion of impurities into an active layer by providing the structure, which has the impurity added semiconductor layer between a clad layer and the active layer and has the semiconductor layer without addition of the impurities. SOLUTION: A thin-film multilayer structure 6 is provided between a p-(Al0.6 Ga0.4 )0.5 In0.5 P clad layer and a Ga0.4 In0.5 active layer 4. This thin-film multilayer structure is formed by laminating a p-(Al0.6 Ga0.4 )0.5 In0.5 P layer 15 and a (Al0.6 Ga0.4 )0.5 In0.5 P layer 16 alternately by, e.g. 10 times, respectively. Since a high temperature is generated when the n-GaAs current block layer 8 and a p-GaAs contact layer 9 are formed, zinc, which is the p-type impurity, is sometimes diffused partially into the (Al0.6 Ga0.4 )0.5 In0.5 P layer 16 without addition of impurities. In this constitution, however, since diffusion is stopped in the (Al0.6 Ga0.4 )0.5 In0.5 P layer 16, the diffusion of zinc into the Ga0.5 In0.5 P active layer 4 seldom occurs, and there is no influence on the characteristics of the semiconductor laser. |
