| 摘要 |
A method of forming an isolation region exerts no adverse influence upon steps after forming the isolation region and is, besides, capable of forming the isolation region having a narrow isolation width. After a mask has been formed of an oxidationproof material such as Si3N4 on a silicon substrate, a field oxide is formed by effecting selective oxidation in a high-pressure dry oxygen atmosphere. Thereafter, a portion, protruded from the silicon substrate, of the formed field oxide is removed, thereby forming the isolation region.
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