| 摘要 |
PCT No. PCT/EP96/03851 Sec. 371 Date Oct. 23, 1997 Sec. 102(e) Date Oct. 23, 1997 PCT Filed Sep. 3, 1996 PCT Pub. No. WO97/09819 PCT Pub. Date Mar. 13, 1997A photoelectric semiconductor light-detection system with programmable dynamic performance includes a semiconductor photocell, preferably a photodiode, by which the impinging light intensity can be converted into a proportional photoelectric current. The drain of a first MOS FET of corresponding channel-type operated to saturation is coupled to the semiconductor photocell, e.g., the cathode or anode of the photodiode, and its source is maintained at a constant potential. A second MOS FET applies a predetermined variable charge amount to the gate of the first MOS FET. A capacitor is provided at the gate of the first MOS FET. The difference between the offset current and the photoelectric current can be integrated by an integration device. A third MOS FET can be operated as a switch to read the integration device and to reset it at a given value.
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