发明名称 RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To obtain a resist composition capable of being exposed to ArF excimer laser beams adapted to micromachining and forming a stable superior pattern by improving striation by incorporating a polymer having structural units each having an alicyclic hydrocarbon group releasable by reaction with an acid and an acid generator and a surfactant. SOLUTION: This resist composition contains the polymer having the structural units each having the alicyclic hydrocarbon groups to be released by reaction with the acid, and the acid generator and the surfactant to be allowed to release a Brnsted acid or lewis acid by irradiation with generally used ultraviolet rays, far ultraviolet rays by KrF or ArF excimer lasers, vacuum ultraviolet rays, electron beams, X-rays, or laser beam, and the like, and the surfactant, such as anionuc surfactants like long-chain metal salts, and cationic surfactants, like a long-chain fatty acid ammonium chloride, and a nonionic surfactants.
申请公布号 JPH11218927(A) 申请公布日期 1999.08.10
申请号 JP19980023499 申请日期 1998.02.04
申请人 NIPPON ZEON CO LTD 发明人 SONE ATSUSHI
分类号 G03F7/004;G03F7/039;G03F7/20;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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