| 摘要 |
In an active matrix liquid crystal display device, gate lines in thin-film integrated circuits constituted of thin-film transistors are formed with aluminum. In forming the gate lines, before patterning a starting film of the gate lines, slits are formed in regions where hillock and whiskers, if they should occur, would cause crosstalk or short-circuiting, and portions of the gate lines within the slits are anodized. Wiring lines are formed by utilizing the regions where the slits were formed. As a result, there can be solved problems that undesired stress would otherwise occur during anodization and that currents large enough for anodization could not be supplied due to a complex wiring pattern. Gate lines in a pixel area are subjected to a separate anodization step.
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