Method of making a semiconductor device having sidewall spacers with improved profiles

摘要

A semiconductor device having improved spacers and a process for fabricating the same is provided. The semiconductor device is formed by forming at least one gate electrode over a substrate and forming a spacer layer over the gate electrode. A nitrogen bearing species is implanted into the spacer layer and portions of the spacer layer are removed, using the implanted nitrogen bearing species as a stop point, in order to form spacers on sidewalls of the gate electrode. Removal of the spacer layer may, for example, be performed using a dry or wet etch process.