| 摘要 |
PROBLEM TO BE SOLVED: To reduce the material loss by forming trenches deep enough to electrically isolate a plurality of semiconductor light emitting elements formed continuously on a substrate by the dry etching along a boundary to partition from adjacent elements. SOLUTION: In the manufacturing process of semiconductor light emitting elements, a light emitting part is covered with a resist 50, pattern fine lines 52 for isolating the elements are formed by dry etching between electrodes. According to this method the step of electrically isolating elements uses the dry etching, hence the cross etching can be suppressed and etching in the depth direction can be made at a high reproducibility. The cross etching quantity is little and a plurality of semiconductor light emitting elements formed continuously on a substrate 10 can be electrically isolated with little material loss. The dry etching is made at a low high-frequency power to reduce the damage, without deteriorating the electric characteristics and reliability. |
