| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a nitride semiconductor light-emitting element by realizing the nitride semiconductor light-emitting element having a large electrostatic breakdown voltage. SOLUTION: A second n-type clad layer 40 containing indium and consisting of an n-type nitride semiconductor is formed between an active layer 5 which has single quantum well or multiple quantum well structure and an n-type clad layer 4, and a second p-type clad layer 60 composed of a p-type nitride semiconductor containing at least indium or p-type GaN is formed between the active layer 5 and the p-type clad layer 6. |
