| 摘要 |
PROBLEM TO BE SOLVED: To improve thermal stability for suppressing the generation of various nonconformities accompanied by corrosion or film reduction in wiring, when a CF film is heated up to around 400 deg.C-450 deg.C when forming tungsten wiring by using the CF film as the interlayer insulating film of a semiconductor device, and F-based gas leaks from the CD film. SOLUTION: Ne gas is used as a plasma generating gas, and compound gas of C and F, for example, C4 F8 gas and a hydrocarbon gas, that is, C2 H4 gas is used as a film formation gas. Then, these film formation gases are made into a plasma, and a CF film is formed on a semiconductor wafer by the active kinds. The mass of Ne gas is small among the rare gases, and since sputtering effect at forming of a film is small strong connection existing in the CF film will not be cut, and only the weak connection is cut. As a result, the connection becomes strong, and the connection can be difficult to be cut even under high temperature, and thermal stability can be improved. |
