发明名称 MANUFACTURE OF DIELECTRIC FOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To accelerate the compounding of a xerogel as a main component of a layer insulation film for an integrated circuit to enable the perfect automation and integrated xerogel formation, by giving a gel-aging chamber + automatic spin rinsing soln. exchange and hydrophobic surface treatment using a continuously flowing catalyst. SOLUTION: A cover soln. on a wafer is aged for about 1.5 min in an NH3 +H2 O atmosphere at room temp. A solvent in polymer network pores is p-type impurity region 4a substituted with ethanol by the continuous spin rinsing with ethanol. A hydrophobic group material such as hexamethyldisilazane is spin-coated on the gel which exchanged the solvent in the previous step, hydroxyl groups remaining in the polymer network are converted all into hydrophobic groups, the wafer is spin-rinsed with hexane, the hydrophobic xerogel is dried in a reductive atmosphere of a forming gas to eliminate the remaining liq., and an HSQ layer 144 is spin-covered and adhered to the xerogel 142 to adhere a dielectric 146 to the HSQ layer surface.
申请公布号 JPH11214658(A) 申请公布日期 1999.08.06
申请号 JP19980301396 申请日期 1998.10.22
申请人 TEXAS INSTR INC <TI> 发明人 JIN CHANGMING;LIST RICHARD SCOTT;LUTTMER JOSEPH D
分类号 C01B33/16;H01L21/314;H01L21/316;H01L21/768;H01L21/8242;H01L27/108 主分类号 C01B33/16
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