发明名称 Method and system for evaluating polysilicon, and method and system for fabricating thin film transistor
摘要 A method of evaluating a state of a polysilicon film objectively, accurately, automatically, and in a non-contact manner is provided. The method includes the steps of picking up a surface of a polysilicon film formed by excimer laser annealing, dividing the picked-up image into meshes each having a specific size, calculating a contrast in each of the meshes, extracting a highest contrast value and a lowest contrast value in the picked-up image, calculating a contrast ratio therebetween, and judging an average grain size of the polysilicon film on the basis of the contrast ratio.
申请公布号 US6673639(B2) 申请公布日期 2004.01.06
申请号 US20020072997 申请日期 2002.02.12
申请人 SONY CORPORATION 发明人 WADA HIROYUKI;UMEZU NOBUHIKO;TATSUKI KOICHI
分类号 G01N15/02;G01N21/84;G01N21/95;H01L21/20;H01L21/268;H01L21/336;H01L21/66;H01L29/786;(IPC1-7):H01L21/66 主分类号 G01N15/02
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