发明名称 |
Method and structure for an advanced isolation spacer shell |
摘要 |
A method and structure are provided for a spacer shell structure which is formed of dielectric materials seletive to one another. The dielectric materials can be configured into a chosen geometric arrangement. The isolation properties of the spacer shell can be scaled to meet a given set of isolation requirements as determined by the size and density of the IGFET devices being isolated. The method to fabricate the novel spacer shell maintains costly fabrication steps at a minimum. The isolation ability of the novel spacer shell preserves the operation integrity of neighboring IGFET devices. Electrical shorts between adjacent devices are prevented. Capacitive coupling between neighboring IGFET structures is likewise minimized.
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申请公布号 |
US5933747(A) |
申请公布日期 |
1999.08.03 |
申请号 |
US19970993390 |
申请日期 |
1997.12.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER, MARK I.;SPIKES, JR., THOMAS E. |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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主权项 |
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地址 |
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