发明名称 |
Semiconductor memory device and defect repair method for semiconductor memory device |
摘要 |
In a semiconductor memory device, rows of normal cell array blocks are selected by 13-bit row addresses corresponding to a refresh period of 8 kc respectively, so that the selected rows are successively refreshed. A spare memory array block is selected by a 12-bit row address for 4 kc excluding the most significant row address in the 13-bit row addresses corresponding to the row addresses of 8 kc. Thus, the semiconductor memory device can effectively carry out defect repair without reducing the yield also when a spare memory cell is inferior in data retention ability.
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申请公布号 |
US5933377(A) |
申请公布日期 |
1999.08.03 |
申请号 |
US19970915270 |
申请日期 |
1997.08.20 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIDAKA, HIDETO |
分类号 |
G11C11/401;G11C11/406;G11C29/00;G11C29/04;G11C29/24;G11C29/44;G11C29/50;H01L27/10;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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