发明名称 |
METHOD FOR FORMING ISOLATION FILM OF SEMICONDUCTOR DEVICE |
摘要 |
A method of forming an isolation layer of a semiconductor device, comprising the steps of defining a semiconductor substrate with a cell region and a peripheral region; forming a first buffer layer on the peripheral region of the semiconductor substrate; forming a second buffer layer on the cell region of the semiconductor substrate and on the first buffer layer; forming an anti-oxidation layer on the second buffer layer to define an active region; and forming a field insulation layer in the cell and peripheral regions of the substrate by oxidation. |
申请公布号 |
KR100214469(B1) |
申请公布日期 |
1999.08.02 |
申请号 |
KR19950067326 |
申请日期 |
1995.12.29 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO.,LTD. |
发明人 |
WHANG, HYEON-SHANG |
分类号 |
H01L21/316;H01L21/32;H01L21/76;H01L21/762;H01L21/8239;H01L21/8242;H01L27/105;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/316 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|