发明名称 Output buffer circuit for semiconductor memory devices
摘要 Disclosed is an output signal buffer circuit of semiconductor memory devices comprises: a plurality of buffer groups each comprising a plurality of output buffers grouped into unit group, in which each output buffer comprises a pull up transistor and a pull down transistor connected between a power supply voltage and ground in series; driving means for sequentially driving respective buffer groups according to internal control signals; and control signal generating means for producing the internal control signals for sequentially driving said buffer groups to said driving means in accordance with an external control signal.
申请公布号 US5929669(A) 申请公布日期 1999.07.27
申请号 US19970998910 申请日期 1997.12.29
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 KIM, JAE-HYEOUNG
分类号 H03K19/003;H03K19/0185;(IPC1-7):H03K19/017 主分类号 H03K19/003
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