| 摘要 |
FIELD: optical instrumentation, study of thin films and transition layers on flat substrates. SUBSTANCE: process involves action on section of substrate with known optical properties with film by field of collimated beam of monochromatic radiation with known parameters of polarization ellipse, initiation of surface electromagnetic waves on surface of substrate by probing radiation, point by point determination of changes of parameters of polarization ellipse in cross-section of beam of reflected radiation as result of interaction of radiation with film and substrate, computation of distribution of optical characteristics of film with allowance for values of these changes. Probing radiation should be linearly polarized in plane of incidence. Standard reflecting structure not carrying studied film is subjected to radiation in addition. Change of parameters of polarization ellipse of radiation is found by changes of amplitude and phase of p component of radiation field. Measurements in all test points are taken simultaneously. EFFECT: possibility of generation of momentary shots of distribution of two characteristics of film. 2 dwg |
