Method of forming a tungsten plug of a semiconductor device

摘要

The present invention relates to a method of forming a tungsten plug of a semiconductor device. After forming the tungsten plug in the contact hole, a tungsten residue existed in a portion except a contact hole is oxidized by oxidation and removed. The oxidation process is performed using a chemical mixture of hydrogen peroxide and ultrapure water. A metal wiring pattern including a reflection prevention layer can also be provided on the tungsten plug prior to the residue oxidation and removal.