发明名称 |
Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors |
摘要 |
A method and apparatus for removing gas species which can be deposited thermally from a semiconductor process exhaust gas is provided. To treat the exhaust gas, an exhaust gas reactor comprising an artificial substrate which is heated is used. The artificial substrate is a structure upon which high temperature chemical vapor deposition (HTCVD) reaction product is deposited. In particular, the HTCVD reaction product is deposited by contacting the exhaust gas with the heated artificial substrate.
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申请公布号 |
US5928426(A) |
申请公布日期 |
1999.07.27 |
申请号 |
US19960694353 |
申请日期 |
1996.08.08 |
申请人 |
NOVELLUS SYSTEMS, INC. |
发明人 |
AITCHISON, KENNETH ALLEN |
分类号 |
B01D53/68;B01D53/00;B01D53/32;B01J15/00;B01J19/08;B01J19/12;C23C16/44;C23C16/511;C23F4/00;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00 |
主分类号 |
B01D53/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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