Method for measuring pattern line width during manufacture of a semiconductor device

摘要

A method for measuring the line width dimensions of a photosensitive film pattern formed during manufacture of a semiconductor device is disclosed. The method uses a photomask which comprises a first auxiliary pattern part having a plurality of first auxiliary patterns separated by a first separation distance therebetween and having substantially the same width dimension as a semiconductor device line pattern formed on a wafer. A second auxiliary pattern part, spaced apart from the first auxiliary pattern part, includes a plurality of second auxiliary patterns separated by a second separation distance therebetween and having substantially the same width dimension as the first auxiliary patterns, the second separation distance being different from the first separation distance. One side of at least one of the second auxiliary patterns is preferably aligned with one side of at least one of the first auxiliary patterns. A larger or smaller width of lines in patterns of the photosensitive film corresponding to these auxiliary patterns of the photomask as observed with a microscope connotes line width dimension information.