| 摘要 |
<p>A method of eliminating an edge effect in chemical vapor deposition of a metal such as copper on a semiconductor substrate (22) surface (26a, 26b). A susceptor (20) in a reaction chamber (46) is exposed to a plasma. A substrate (22) contained thereon and processed by chemical vapor deposition has a uniform metal layer at edge (44) and non-edge surfaces (28). A plurality of substrates (22) may be processed before reexposing the susceptor (20) to the plasma.</p> |
