发明名称 |
PLASMA ANNEALING OF SUBSTRATES TO IMPROVE ADHESION |
摘要 |
A layer of material is formed on a substrate in a partially formed integrated circuit on a wafer. The substrate undergoes a plasma annealing, during which the substrate is bombarded with ions. The plasma annealing may be performed by exposing the substrate to plasma that is generated from a nitrogen containing gas which is infused with energy. After the substrate is plasma annealed, a layer of a refractory metal nitride is deposited on the substrate. The layer of refractory metal nitride is then bombarded with a first set of ions. The bombardment of the refractory metal by the first set of ions may be achieved by performing a plasma annealing. The refractory metal nitride may be further bombarded by a second set of ions. |
申请公布号 |
WO9936955(A1) |
申请公布日期 |
1999.07.22 |
申请号 |
WO1998US25276 |
申请日期 |
1998.11.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
TSENG, JENNIFER;CHANG, MEI;CHEN, LING;SMITH, DAVID, C.;LITTAU, KARL, A.;CHERN, CHYI;LIAO, MARVIN |
分类号 |
C23C16/02;C23C16/34;C23C16/458;C23C16/48;C23C16/509;C23C16/56;H01L21/285;H01L21/768 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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