| 发明名称 |
METHOD FOR USING A HARD MASK FOR CRITICAL DIMENSION GROWTH CONTAINMENT |
| 摘要 |
A method for containing the critical dimension growth of the feature on a semiconductor substrate (56) includes placing a substrate with a hard mask (52) comprised of a reactive metal or an oxidized reactive metal in a chamber and etching the wafer. The method further includes using a hard mask which has a low sputter yield and a low reactivity to the etch chemistry of the process.
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| 申请公布号 |
CA2319188(A1) |
申请公布日期 |
1999.07.22 |
| 申请号 |
CA19992319188 |
申请日期 |
1999.01.05 |
| 申请人 |
TEGAL CORPORATION |
发明人 |
COFER, ALFERD;JERDE, LESLIE G.;DEORNELLAS, STEPHEN P. |
| 分类号 |
H01L21/302;H01L21/027;H01L21/033;H01L21/3065;H01L21/308;H01L21/3213;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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