发明名称 PATTERN INSPECTION METHOD AND ITS DEVICE AND PATTERN INSPECTION METHOD AND DEVICE BASED ON ELECTRON RAY IMAGE
摘要 PROBLEM TO BE SOLVED: To reduce a false report caused by a disagreement due to an inspection target and an image detection system and to detect a fine defect, by performing division into small region units and performing cutting, and then judging whether an area is a defect or a defect candidate based on the difference between first and second divided images being calculated for each division unit. SOLUTION: A scanning of electron beams is controlled for detecting an image with small distortion and at the same time the image is divided into a size so that a distortion can be ignored, and a position deviation is detected with accuracy being equal to or less than a picture element for each division unit, thus judging a defect. An inspection target 100 such as a wafer is scanned by electron rays 30, electrons being generated from the inspection target 100 are detected by applying the electron rays 30, the image of electron rays at a scanning site is obtained based on the intensity change, and pattern scanning is made by the image of electron rays, thus reducing a false report caused by such disagreement as the small difference in a pattern shape due to the side of an object to be inspected or an inspection device, a difference in a gradation value, a pattern distortion, and a position deviation and detecting a finer defect or a defect candidate.
申请公布号 JPH11194154(A) 申请公布日期 1999.07.21
申请号 JP19980000606 申请日期 1998.01.06
申请人 HITACHI LTD 发明人 SHISHIDO CHIE;TAKAGI YUJI;MAEDA SHUNJI;NINOMIYA TAKANORI;HIROI TAKASHI;WATANABE MASAHIRO;DOI HIDEAKI
分类号 G01B11/30;G01R31/302;G06T1/00;G06T5/00;G06T7/00;H01J37/22;H01J37/28;H01L21/027;H01L21/66 主分类号 G01B11/30
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