| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device, in which a memory capacitor is easily and reliably formed on an upper layer of bit lines so as to suppress short-circuiting between the bit lines, and planarizing of the upper layer of the bit lines as well as further insulation between the bit lines and an upper-layer wiring can be adequately secured. SOLUTION: A silicon nitride film is formed by a CVD process on an interlayer insulating film 18 so as to cover bit lines 20, the entire surface of the silicon nitride film is anisotropically etched to be left at only sidewall faces of the bit lines 20 to thereby form widewalls 21. A contact hole 23 for formation of a storage node electrode 24 is provided between the sidewalls 21 for an adjacent pair of the bit lines 20. Even when the contact hole 23 is misaligned, the bit lines 20 can be protected by the sidewalls 21. |
